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Once you plan buying thermal oxide silicon wafers, you should have thought everything width you require. Generally, each thickness is actually two in order to six where dry SiO2 films are from 20 to 500 nm furthermore moist thermal oxide are off fifty nm as much as two m. Dry oxidation usually take place in heat ranging between 850 as well as 1200 degree C as well as shows down growth prices. This process enables good depth uniformity furthermore purity. Consequently, this will be highly favored solution to create high-quality thermal oxide silicon wafers.

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